收藏本站
NTB6413AN, NTP6413AN,
NVB6413AN
N-Channel Power MOSFET
100 V, 42 A, 28 m W
Features
? Low R DS(on)
? High Current Capability
? 100% Avalanche Tested
? NVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC ? Q101
Qualified and PPAP Capable
? These Devices are Pb ? Free and are RoHS Compliant
MAXIMUM RATINGS (T J = 25 ° C Unless otherwise specified)
V (BR)DSS
100 V
http://onsemi.com
R DS(ON) MAX
28 m W @ 10 V
N ? Channel
D
I D MAX
(Note 1)
42 A
Parameter
Drain ? to ? Source Voltage
Symbol
V DSS
Value
100
Unit
V
Gate ? to ? Source Voltage ? Continuous
V GS
$ 20
V
G
Continuous Drain
Current R q JC
Steady
State
T C = 25 ° C
T C = 100 ° C
I D
42
28
A
S
Power Dissipation
R q JC
Pulsed Drain Current
Steady T C = 25 ° C
State
t p = 10 m s
P D
I DM
136
178
W
A
4
4
Operating Junction and Storage Temperature
Range
Source Current (Body Diode)
T J , T stg
I S
? 55 to
+175
42
° C
A
TO ? 220AB
1
2
3
D 2 PAK
Single Pulse Drain ? to ? Source Avalanche
Energy (V DD = 50 Vdc, V GS = 10 Vdc,
I L(pk) = 36.5 A, L = 0.3 mH, R G = 25 W )
E AS
200
mJ
1
2
3
CASE 221A
STYLE 5
CASE 418B
STYLE 2
Lead Temperature for Soldering
Purposes, 1/8 ″ from Case for 10 Seconds
THERMAL RESISTANCE RATINGS
Parameter
Junction ? to ? Case (Drain) Steady State
T L
Symbol
R q JC
260
Max
1.1
° C
Unit
° C/W
4
Drain
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
Junction ? to ? Ambient (Note 1) R q JA 35
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 sq in pad size,
(Cu Area 1.127 sq in [2 oz] including traces).
1
Gate
NTP
6413ANG
AYWW
3
Source
1
Gate
NTB
6413ANG
AYWW
2
Drain
3
Source
2
Drain
6413AN = Specific Device Code
G = Pb ? Free Device
A = Assembly Location
Y = Year
WW = Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
? Semiconductor Components Industries, LLC, 2012
July, 2012 ? Rev. 3
1
Publication Order Number:
NTB6413AN/D
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
NTB85N03T4G MOSFET N-CH 28V 85A D2PAK
NTBV5605T4G MOSFET P-CH 60V 18.5A D2PAK
NTC-04-0002 GU 7000 SERIES POWER CABLE
NTCDS3SG104GC4NB THERMISTOR NTC GLASS 100KOHM AXL
NTCG104LH104HT1 THERMISTOR NTC 100K OHM 3% 0402
NTD110N02RT4 MOSFET N-CH 24V 12.5A DPAK
NTD12N10T4 MOSFET N-CH 100V 12A DPAK
NTD14N03RG MOSFET N-CH 25V 2.5A DPAK
相关代理商/技术参数
NTB6413ANT4G 功能描述:MOSFET NFET D2PAK 100V 40A 30MO RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTB6448ANG 功能描述:MOSFET NFET D2PAK 100V 80A 14MO RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTB6448ANT4G 功能描述:MOSFET NFET D2PAK 100V 80 14MO RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTB65N02R 功能描述:MOSFET 24V 65A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTB65N02R_05 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 65 A, 24 V N-Channel TO-220, D2PAK
NTB65N02RG 功能描述:MOSFET 24V 65A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTB65N02RT4 功能描述:MOSFET 24V 65A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTB65N02RT4G 功能描述:MOSFET 24V 65A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube